The main objective of this work is to investigate the impact of the composition of the confinement barriers on the light emission of InAs quantum dots embedded in AlGaAs/GaAs heterostructures, as well as on the structural parameters of the heterostructures in various states of growth, following thermal annealing and aging processes. The structures were labeled as #1 and #2, differing in the composition of their confinement barriers. Structure #1 consists of Al0.30Ga0.70As (capping layer) and In0.15Ga0.85As (buffer), while sample #2 have Al0.40Ga0.45In0.15As (capping layer) and In0.25Ga0.75As (buffer), both containing InAs quantum dots. The samples were characterized using two different techniques: Photoluminescence (PL) and High-Resolution X-Ray Diffraction (HR-XRD), which provide information about their emission efficiency and structural parameters. PL studies indicated that after aging, there is an increase in the interdiffusion of Ga/In atoms, affecting the size and homogeneity of the quantum dots. Structure #2AV show the smallest quantum dot size due to the relaxation of elastic stresses, resulting in greater homogeneity in the quantum dot size due to the loss of peripheral quantum dots. HR-XRD studies and numerical adjustments indicate that a lower number of Pendellösung peaks may reflect lower quality in the samples, revealing phenomena of Ga/In interdiffusion, as well as the presence of elastic stress relaxation mechanisms in the structure. The aging time of the samples significantly impacts their compositions and emissions, affecting the homogeneity and quality of the quantum dots.